发明名称 Method for evaluating the effect of a barrier layer on electromigration for plug and non-plug interconnect systems
摘要 A substantially constant current is conducted in a first direction through an interconnect structure having a barrier layer to determine the lifetime of the structure in the first current direction. A substantially identical current is conducted in a second direction through a substantially identical interconnect structure to determine the lifetime of the structure in the second current direction. These tests are repeated for identical structures but having different barrier layer thicknesses. The results of these lifetime tests are compared to determine the barrier layer's effect on electromigration in the structure, which can be used to design the barrier layer to optimize the structure's lifetime and speed.
申请公布号 US5612627(A) 申请公布日期 1997.03.18
申请号 US19940348645 申请日期 1994.12.01
申请人 ADVANCED MICRO DEVICES, INC. 发明人 BUI, NGUYEN D.;YUE, JOHN T.;PHAM, VAN
分类号 G01R27/26;G01R31/28;(IPC1-7):G01R27/26 主分类号 G01R27/26
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