发明名称 |
Thin film sensor element and method of manufacturing the same |
摘要 |
A thin film sensor element includes a sensor holding substrate having an opening part and a multilayer film adhered thereon at least consisting of an electrode film A, an electrode film B having (100) plane orientation, and a piezoelectic dielectric oxide film present between the electrode film A and the electrode film B. As a result, a thin film sensor element which is small, light, highly accurate, and inexpensive can be attained which can be used for an acceleration sensor element and a pyroelectric infrared sensor element. On the surface of a flat plate KBr substrate, a rock-salt crystal structure oxide of a conductive NiO is formed by a plasma MOCVD method whose vertical direction is crystal-oriented to <100> direction against the substrate surface. By means of a sputtering method, a PZT film is formed by an epitaxial growth on that surface, and a Ni-Cr electrode film is formed thereon. Next, the multilayer film structure is reversed and adhered to a sensor substrate having an opening part with an adhesive. After a connection electrode is connected, the whole structure is washed with water, thereby removing the KBr substrate.
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申请公布号 |
US5612536(A) |
申请公布日期 |
1997.03.18 |
申请号 |
US19950374989 |
申请日期 |
1995.01.19 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
TORII, HIDEO;KAMADA, TAKESHI;HAYASHI, SHIGENORI;TAKAYAMA, RYOICHI;HIRAO, TAKASHI;HATTORI, MASUMI |
分类号 |
G01P15/08;G01P15/09;H01L41/22;H01L41/29;(IPC1-7):G01J5/10 |
主分类号 |
G01P15/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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