| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a mark for measurement of accuracy in superposition where the influence of aberration is taken into consideration, by making each mark for measurement, which is made in the same manufacture process as the constituent part of a semiconductor device composed of two stacked layers, have a pattern which is affected by the same aberration as the time of having applied light to the constituent member. SOLUTION: The first measurement mark 100 is made through a gate oxide film 2 above a semiconductor substrate 1, and it is constituted of an auxiliary measurement pattern 100A of 0.4μm wide, along the sides of a square of 25μm×25μm, as a left pattern. The second measurement pattern 200 is made through an interlayer oxide film 3 above the first measurement mark 100, and plural pieces of punched patterns 200A of 0.5μm×0.5μm are arranged along the side of the square of 15μm×15μm. Accordingly, using the first measuring mark 100 and the second measuring mark 200, the observed detection signal has the same comatic aberration as that of the work line, the bit line, and the contact hole made within the semiconductor device.</p> |
