HIGH WITHSTAND VOLTAGE IC AND HIGH WITHSTAND VOLTAGE LEVEL SHIFT CIRCUIT USIDED THEREFOR

摘要

PROBLEM TO BE SOLVED: To prevent decrease of withstand voltage due to signal wirings, and realize cost reduction, by constituting the signal wirings which sandwiches high withstand voltage junction terminal structures and are arranged, by using bonding wires. SOLUTION: High withstand voltage junction terminal structures HVJT are formed in GDU1-GDU3, a high withstand voltage n channel MOSFET (HVN), and a high withstand voltage p channel MOSFET (HVP). The drain electrode DN of the high withstand voltage n channel MOSFET (HVN) is connected with GDU1 through SIN1. The drain electrode DP of the high withstand voltage p channel MOSFET (HVP) is connected with LSU through SOUT1.