发明名称 Electrode structure for ferroelectric capacitors for integrated circuits
摘要 An improved electrode structure compatible with ferroelectric capacitor dielectrics is provided. In particular, a multilayer electrode having improved adhesion to ferroelectric materials such as PZT is formed comprising a first layer of a noble metal, a second layer of another metal and a thicker layer of the noble metal, which are annealed to cause controlled interdiffusion of the layers forming a mixed metal surface layer having a rough interface with the dielectric layer. For example, the first two layers comprise relatively thin DIFFERENCE 200 ANGSTROM layers of Pt and Ti, and then a thicker layer of the main, first, electrode material is deposited on top. Non- uniform interdiffusion of the layers during annealing causes intermixing of the Pt and Ti layers at the interfaces forming a Pt/Ti alloy having a rough surface. The rough surface, and particularly hillocks formed at the interface, penetrate into the ferroelectric films, and anchor the electrode material to the dielectric. Improved adhesion of the conductive electrode material improves integrity of this interface during subsequent processing.
申请公布号 US5612560(A) 申请公布日期 1997.03.18
申请号 US19950551264 申请日期 1995.10.31
申请人 NORTHERN TELECOM LIMITED 发明人 CHIVUKULA, VASANTA;LEUNG, PAK K.
分类号 H01L21/02;(IPC1-7):H01L27/108 主分类号 H01L21/02
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