发明名称 |
Semiconductor device having pillar shaped transistor and a method for manufacturing the same |
摘要 |
A vertically structured transistor and method for manufacturing the same achieves a highly integrated semiconductor device. A pillar is vertically formed on a semiconductor substrate and forms a channel region of the transistor. A gate electrode is formed in a self-alignment fashion so as to surround the sides of the pillar with a gate insulating film imposed therebetween. A source region and a drain region are formed in a lower portion and an upper portion of the pillar, respectively. The area occupied by a transistor according to the present invention is remarkably reduced.
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申请公布号 |
US5612559(A) |
申请公布日期 |
1997.03.18 |
申请号 |
US19940298470 |
申请日期 |
1994.08.30 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
PARK, KYU-CHAN;SHIM, TAE-EARN;YU, SEON-IL |
分类号 |
H01L27/04;H01L21/822;H01L21/8242;H01L27/10;H01L27/108;H01L29/78;H01L29/786;(IPC1-7):H01L27/108;H01L29/76;H01L29/94;H01L31/119 |
主分类号 |
H01L27/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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