Plasma etching of semiconductors

摘要

A dry etching process for use in the manufacture of silicon integrated circuit devices uses a mixture of about eight parts neon to one part CHF3 (Freon 23) to form the etching plasma. The process etches doped oxides of silicon, such as BPSG and BPTEOS, in preference to undoped oxides of silicon, silicon nitride, silicides and silicon.