| 摘要 |
PROBLEM TO BE SOLVED: To obtain such a sputtering target that solves problems in the production process of a dielectric film comprising a chalcogenide, oxide and carbon by sputtering, that a stable film compsn. can be obtd. in a low-cost device, and that the target can be easily produced. SOLUTION: This target contains at least a chalcogenide, oxide and carbon. The target is produced by compacting and sintering a mixture of a chalcogenide, oxide and carbon. The chalcogenide is selected from among ZnS, ZnSe and ZnTe. |
