发明名称 MULTIPLE CHARGED PARTICLE BEAM EXPOSURE METHOD AND ITS DEVICE
摘要 PROBLEM TO BE SOLVED: To simplify the constitution of detecting errors so as to improve the throughput of exposure by obtaining the check sum, with the bit map data within a band-shaped scan range as a unit. SOLUTION: A semiconductor wafer 10 is mounted on a mobile stage 55, and the shifting of the mobile stage 55 is controlled by a stage control circuit 56, and the position is measured with a laser interference measuring tool 57. When the drive signal to a sub deflecting system 20 and a main deflecting system 54 is 0, a multibeam EB2 is applied to the intersecting point between the optical axis of an exposer and a semiconductor wafer 10. The laser interference measuring tool 57 supplies a quantity-of-deflection computing circuit 58 with the coordinates (PX and PY) of the mobile stage scanning position P to the fixed origin on the semiconductor wafer 10. The quantity-of-deflection computing circuit 58 computes the quantity PQX2 of main deflection and the quantity QRX2 of sub deflection so as to apply the multibeam EB2 to the objective position on the semiconductor wafer 10 by the main deflector 54 and the sub deflector 20, and supplies them to a D/A converter 59 and a D/A converter 21, respectively.
申请公布号 JPH0974060(A) 申请公布日期 1997.03.18
申请号 JP19950230176 申请日期 1995.09.07
申请人 FUJITSU LTD 发明人 SATO TAKAMASA;ARAI SOICHIRO;MIYAZAWA KENICHI;DAIKYO YOSHIHISA;KAI JUNICHI;YASUDA HIROSHI
分类号 G03F7/20;H01J37/302;H01J37/317;H01L21/027 主分类号 G03F7/20
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