| 摘要 |
PROBLEM TO BE SOLVED: To provide a light emitting element having a new structure with which the generation of a sub-peak light can be controlled. SOLUTION: A reflecting layer 2, which reflects the subpeak light L2 emitted from a substrate which is excited by the main peak light L1 emitted by a light emitting part 3, is provided between the light emitting part 3 and a crystal substrate 1 in the semiconductor light emitting element. It is desirable that the material having band gap energy larger than the energy of the main peak light, is used for the reflecting layer, and also it is preferable to used the material formed by laminating a plurality of sets of two layers consisting of two semiconductors having different refractive index. Also, out of a pair of semiconductor layers which constitute a reflecting layer, the band gap energy of either one of the semiconductors may be made equal to the energy of the main peak light. Besides, it is preferable that a reflecting layer, which reflects the main peak light, is provided between the light emitting part and the reflecting layer. |
