| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a field emitting cold cathode device which can have a broader range of choice of usable materials than conventional ones, enhance the efficiency and uniformity of field emission and the uniformity of energy, and excels in mass-productivity. SOLUTION: AlGaAs layers 102 and GaAs layers 103 are stacked alternately, and a metal (Al) film 104 is formed over one of the cross sections of the layers to form a contact and a substrate. A GaAs high-doped layer 105 is formed at each end, and electrodes are formed on both sides of the layer 105 by vapor deposition of metal (Al) 106.</p> |
