NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE WITH FUNCTION OF BRINGING MEMORY CELL TRANSISTORS TO OVERERASED STATE, AND METHOD OF WRITING DATA IN THE DEVICE,申请号KR19940001686-传众专利搜索

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发明名称	NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE WITH FUNCTION OF BRINGING MEMORY CELL TRANSISTORS TO OVERERASED STATE, AND METHOD OF WRITING DATA IN THE DEVICE
摘要
申请公布号	KR970003095(B1)	申请公布日期	1997.03.14
申请号	KR19940001686	申请日期	1994.01.31
申请人	FUJITSU KK.	发明人	MAKINO, DAKAMI
分类号	G11C17/00;G11C16/02;G11C16/10;G11C16/16;G11C16/34;(IPC1-7):G11C16/06	主分类号	G11C17/00
代理机构		代理人
主权项
地址

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