| 摘要 |
A method of fabricating a capacitor of a semiconductor device includes the steps of forming a conductive layer on a semiconductor substrate, sequentially forming a first material layer and polysilicon layer having hemispherial grains on the conductive layer, forming a photoresist pattern on the overall surface of the substrate having the polysilicon layer, leaving the polysilicon layer and first material layer only under the photoresist pattern, anisotropically etching the conductive layer to form at least two step shaped portions, the height of the step shaped portions becoming low as they are close to the edge of unit cell from its center, removing the photoresist pattern, forming a spacer on the sidewalls of the step shaped portions, simultaneously, leaving the first material layer only under the polysilicon layer, anisotropic-etching the conductive layer by a thickness of the thinnest conductive layer using the first material layer and spacer as a mask, to form a first electrode having at least two cylinders, and removing the spacer and first material layer.
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