Semiconductor device, e.g. DRAM

摘要

Semiconductor device comprises a semiconductor substrate, and a capacitor provided on the substrate. The capacitor has a lower electrode, a dielectric film on the lower electrode, and an upper electrode on the dielectric film. The novelty is that the dielectric film (117) has a thickness of 100 nm or less, and is made of a metal oxide consisting of a perovskite structure of ABO3 type (where A = Sr, Ba or Ca ion; and B = Ti ion), and contains Fe, Mn or Co. Also claimed is a dynamic storage device. Further claimed is the prodn. of the semiconductor device.