X=ray photodetector component apparatus for computer tomography

摘要

The apparatus uses semiconductor devices having radiation absorption surfaces provided with a doped region (24) of one conductivity. At least one further region (20-23,25-28) of similar conductivity, each region being provided at respective depths. A region of opposite conductivity lies between these two regions and at a third depth. The initial two regions can be activated separately or simultaneously, via contact devices (50-58,60-68) coupled to the doped regions extending along the absorption surface.