发明名称 Low temp. and pressure, direct bonding of nitride surface
摘要 Direct bonding of the nitride surface of a first body (13) to the surface of a second body (14) involves: (a) cleaning the surfaces of the bodies; (b) terminating the bonds of the nitrogen atoms at the surface of the first body (13) with hydrogen atoms; and (c) bonding the surfaces of the bodies using the bonds of the hydrogen atoms. Step (b) is carried out by chemical etching with dil. hydrofluoric acid or by using a hydrogen plasma (36), produced by electron cyclotron resonance or by a radical beam source in vacuum.
申请公布号 DE19637162(A1) 申请公布日期 1997.03.13
申请号 DE1996137162 申请日期 1996.09.12
申请人 NIPPONDENSO CO., LTD., KARIYA, AICHI, JP 发明人 NAGAKUBO, MASAO, KARIYA, AICHI, JP;SUZUKI, HARUMI, KARIYA, AICHI, JP;KURAHASHI, TAKASHI, KARIYA, AICHI, JP
分类号 B23K20/00;B01J19/00;B01J19/08;C04B35/58;C04B37/00;H01L21/02;(IPC1-7):C04B37/00 主分类号 B23K20/00
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