| 摘要 |
A process for economically producing single crystal diamond film with a large surface area by gas-phase synthesis comprises depositing platinum film or platinum alloy film containing more that 50 atomic % of platinum on a basal substrate with (111) or (001) surface while keeping the substrate temperature at 300{C or above, annealing the platinum or platinum alloy film at 1000{C or above, and performing the gas-phase synthesis of diamond using said platinum or platinum alloy film a the substrate. The basal substrate may be lithium fluoride, calcium fluoride, magnesium oxide, nickel oxide, zirconium oxide, aluminium oxide, strontium titanate, barium titanate, lead titanate, potassium tantalate, silicon, quartz or glass. After annealing and before gas-phase synthesis the surface may be buffed with a diamond powder or paste, scratched by ultrasonic means or implanted with carbon ion. |
