| 摘要 |
1,142,674. Semi-conductor devices. MULLARD Ltd. 18 Feb., 1966, No. 7254/66. Heading H1K. An insulated gate FET comprises a body of one conductivity type having interdigitated source and drain regions defining a meandering channel, the source and drain regions each having a low resistivity base portion from which the fingers extend, and the gate being disposed over, and insulated from, the fingers of the source and drain regions and the channel. As shown, Fig. 2, the device comprises source and drain regions 13, 15 defining a meandering channel 17, and having heavily doped contact regions 11, 12 and interlocking fingers 14, 16. The gate electrode 18 extends across the fingers 14, 16 and defines the active sections of the channel. The device operates in the enhancement mode but can be converted into a depletion-mode device by providing a surface conduction channel region between the source and drain regions. The device may be produced in a wafer of P-type silicon by oxidizing, photomasking and etching with ammonium fluoride and hydrofluoric acid, diffusing-in phosphorus to form N<SP>+</SP> source and drain contact regions, exposing the required source, drain and channel regions, masking the meandering channel region using an electron beam to decompose an atmosphere of oxygen containing tetraethoxysilane, heating in wet argon, diffusing-in arsenic to form source and drain regions, removing the meandering channel mask, oxidizing the whole surface, opening windows for the contacts, and depositing aluminium to form the source and drain contacts and the gate region. The device may be mounted on a header and encapsulated. An N-type surface channel region for the depletionmode devices may be produced by a donor diffusion before forming the channel mask. Alternatively this region may be formed as an inversion layer during application of the gate insulation. Other active and passive devices may be provided in the substrate. The use of the transistor in a tuned amplifier is also described, Fig. 5 (not shown). |
