发明名称 |
Optical integrated circuit and method for fabricating the same |
摘要 |
<p>A semiconductor waveguide layer (15) is provided in an optical semiconductor integrated circuit device comprising a passive region (101) having at least a branch (2) and an active region (102) having at least a laser diode connected to the branch (2) and at least a photo-diode connected to the branch (2). The active region (102) is in contact with the passive region (101). The waveguide layer (15) selectively extends over the passive region (101) and the active region (102). The semiconductor waveguide layer (15) in the active region (102) has a wavelength composition larger than that in the passive region (101). The waveguide layer (15) has a semiconductor crystal structure which is continuous not only over the active and passive regions (102,101) but also at a boundary between the active and passive regions (102,101). <IMAGE></p> |
申请公布号 |
EP0762157(A2) |
申请公布日期 |
1997.03.12 |
申请号 |
EP19960114144 |
申请日期 |
1996.09.04 |
申请人 |
NEC CORPORATION |
发明人 |
HAMAMOTO, KIICHI;SASAKI, TATSUYA;TAKEUCHI, TAKESHI;HAYASHI, MASAKO;KOMATSU, KEIRO;MITO, IKUO;TAGUCHI, KENKO |
分类号 |
G02B6/12;G02B6/42;H01L31/173;H01S5/026;H01S5/20;H01S5/227;(IPC1-7):G02B6/00 |
主分类号 |
G02B6/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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