Semiconductor device having field oxide regions and a field implant and method of manufacturing the same

摘要

A method of forming field oxide regions and a self-aligned field implant is disclosed where the field implant (130) is performed after the field oxide regions (38,39,40) are formed. An alternate masking layer (60,60') is used during the field implant to form a combined doped layer (62,62') in at least a portion of an active area (41) of a semiconductor device. The combined doped layer is self-aligned to the field oxide regions (38,39). <IMAGE>