Method and circuit for programming and erasing a memory

摘要

The method involves generation of a programming or erasure voltage with an offset equal to a reference voltage, followed by a ramp leading to a plateau and a final abrupt drop. The offset is fixed at an intermediate voltage (Vint) between the supply voltage and the cell tunnel voltage. The rising portion of the voltage ramp is divided into a first section (202) which leads up to the intermediate voltage, and a second section (203) which rises at a slower rate to the plateau (204). At the plateau, the programming voltage (Vpp) is equal to the maximum voltage value (Vmax).