Schottky barrier diode

摘要

A Schottky barrier diode (52) having improved breakdown characteristics has an n<+> semiconductor layer (1) and an n<-> semiconductor layer (2) provided on the n<+> semiconductor layer (1). The n<-> semiconductor layer (2) is configured to form a mesa. An insulating layer (8) is formed so as to expose the upper surface of the mesa. An anode electrode (4) is provided on the exposed surface and a side surface of the mesa, while a cathode (5) is electrically connected to the n<+> layer. A plasma treated layer (9) is provided in the n<-> semiconductor layer (2) so as to extend inwardly from at least a portion of the side surface of the mesa. <IMAGE>