| 摘要 |
PURPOSE:To prevent damage to a wafer by a method wherein a process to punch out a resin film with size larger than that of a semiconductor substrate while molten-removing the jutting out portion of the resin film using a heating wire as well as another process to peel off the resin film from semiconductor substrate using a bonding tape, are provided. CONSTITUTION:A resin film 5 is pressed down upon the surface of Si wafers 2 by an automatic push roller 18 at specified optimum pressure to punch out the Si wafers 2 along a circular guide larger than the Si wafers 2 continuously stuck on the tape of resin film 5. Later, the Si wafers 2 with a Ni-Cr wire heater 24 pressed down upon the edge of Si wafers 2 by spring 27 pressure are turned to cut off the jutting out resin film 5 from the Si wafers 2 cleanly along the edge of Si wafers 2 without fail. After pressing down a bonding tape 31 upon the resin film 5 by a pressure fixing roller 32, the bonding tape 31 can be wound up from the end thereof so that the resin film 5 may be peeled off from the wafers 2 due to the higher adhesion of bonding tape 31 than that of the resin film 5. |
