发明名称 |
Force transducer and pressure detecting circuit using the same |
摘要 |
<p>A force transducer (1000) comprising: (a) a silicon semiconductor (40) having a face (40a) of (110) or a crystal face equivalent to the face (40a) of (110), on which a force (W) is to be applied; (b) a pair of input-output shared electrodes (42, 42') mounted on the crystal face (40a) of said silicon semiconductor (40) in mutual confronting relationship in a direction of <110> of the crystal or a direction equivalent to the direction of <110>; (c) a force transmission block (60) connected to the crystal face (40a) of said silicon semiconductor (40) for transmitting the force (W) perpendicularly to the crystal face (40a); and (d) a support bed (70) supporting said silicon semiconductor (40) and connected to said silicon semiconductor (40) at a face opposite to the crystal face to which said force transmission block (60) is connected, whereby a voltage corresponding to the force (W) and to be measured is output from said input-output shared electrodes (42, 42') when the force (W) is applied perpendicularly to the crystal face (40a) of said silicon semiconductor (40) via said force transmission block (60) while a current flows in said silicon semiconductor via said input-output shared electrodes (42, 42'). <IMAGE></p> |
申请公布号 |
EP0579226(B1) |
申请公布日期 |
1997.03.12 |
申请号 |
EP19930111374 |
申请日期 |
1993.07.15 |
申请人 |
KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHO |
发明人 |
OMURA, YOSHITERU;TSUKADA, KOUJI;NONOMURA, YUTAKA;MORIKAWA, TAKESHI |
分类号 |
G01L1/16;G01L1/18;G01L9/00;G01L9/06;G01L9/08;G01L23/10;G01L23/22;(IPC1-7):G01L1/18 |
主分类号 |
G01L1/16 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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