发明名称 Force transducer and pressure detecting circuit using the same
摘要 <p>A force transducer (1000) comprising: (a) a silicon semiconductor (40) having a face (40a) of (110) or a crystal face equivalent to the face (40a) of (110), on which a force (W) is to be applied; (b) a pair of input-output shared electrodes (42, 42') mounted on the crystal face (40a) of said silicon semiconductor (40) in mutual confronting relationship in a direction of <110> of the crystal or a direction equivalent to the direction of <110>; (c) a force transmission block (60) connected to the crystal face (40a) of said silicon semiconductor (40) for transmitting the force (W) perpendicularly to the crystal face (40a); and (d) a support bed (70) supporting said silicon semiconductor (40) and connected to said silicon semiconductor (40) at a face opposite to the crystal face to which said force transmission block (60) is connected, whereby a voltage corresponding to the force (W) and to be measured is output from said input-output shared electrodes (42, 42') when the force (W) is applied perpendicularly to the crystal face (40a) of said silicon semiconductor (40) via said force transmission block (60) while a current flows in said silicon semiconductor via said input-output shared electrodes (42, 42'). <IMAGE></p>
申请公布号 EP0579226(B1) 申请公布日期 1997.03.12
申请号 EP19930111374 申请日期 1993.07.15
申请人 KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHO 发明人 OMURA, YOSHITERU;TSUKADA, KOUJI;NONOMURA, YUTAKA;MORIKAWA, TAKESHI
分类号 G01L1/16;G01L1/18;G01L9/00;G01L9/06;G01L9/08;G01L23/10;G01L23/22;(IPC1-7):G01L1/18 主分类号 G01L1/16
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