发明名称 |
Process for continuously forming a large area functional deposited film by microwave PCVD method and an apparatus suitable for practicing the same |
摘要 |
<p>A microwave plasma CVD method for continuously forming a large area and length functional deposited film, the method comprises: continuously moving a substrate web in the longitudinal direction by paying out it by a pay-out mechanism and taking up it by a take-up mechanism; establishing a substantially enclosed film-forming chamber by curving and projecting said moving substrate web to form a columnar portion to be the circumferential wall of said film forming chamber on the way moving from said pay-out mechanism toward said take-up mechanism; introducing a film-forming raw material gas through a gas feed means into said film-forming chamber; at the same time, radiating a microwave energy in said film-forming chamber by using a microwave applicator means, which is so designed that it can radiate a microwave energy in the direction parallel to the microwave propagating direction, to generate microwave plasma in said film-forming chamber, whereby continuously forming a deposited film on the inner wall face of said continuously moving circumferential wall to be exposed to said microwave plasma. A microwave plasma CVD apparatus suitable practicing said method.</p> |
申请公布号 |
EP0406690(B1) |
申请公布日期 |
1997.03.12 |
申请号 |
EP19900112247 |
申请日期 |
1990.06.27 |
申请人 |
CANON KABUSHIKI KAISHA |
发明人 |
MATSUYAMA, JINSHO;KARIYA, TOSHIMITSU;FUJIOKA, YASUSHI;TAKEI, TETSUYA;NAKAGAWA, KATSUMI;KANAI, MASAHIRO;ECHIZEN, HIROSHI |
分类号 |
C23C16/511;C23C16/54;H01J37/32;H01L21/205;H01L29/872;H01L31/076;H01L31/20;(IPC1-7):H01L31/20;C23C16/24 |
主分类号 |
C23C16/511 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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