Cleaning solution for cleaning semiconductor device and cleaning method using the same

摘要

The invention provides a cleaning solution for cleaning a semiconductor device which comprises aqueous ammonia (NH4OH), methanol (CH3OH), hydrofluoric acid (HF) and deionized water (H2O). The cleaning solution can be manufactured by simply mixing the respective compositions. The cleaning solution of the invention has the ability to strip polymers and particles within a short time, without etching or damaging the cleaned metal layers. Therefore, the present invention results in the simplification of the cleaning of a semiconductor device resulting in a reduction in processing cost and an improvement in the yield and reliability. There is also provided a method for using the cleaning solution of the invention to clean a semiconductor device.