| 摘要 |
PROBLEM TO BE SOLVED: To lower temperature and to speed up time for film-formation and to reduce leak current, in a film formation method, by a sol-gel method or an MOD method, for a ferroelectric thin film or a dielectric thin film consisting of a bismuth layer structured compound material. SOLUTION: A stage (step 1) wherein the precursor solution which contains at least a kind of metal and consists of metallic complex salt in solvent is applied on a film consisting of one or more layers on a substrate, for forming a thin film, a stage (step 2) wherein the thin film is dried for removing the solvent of the precursor solution, and a stage (step 3) wherein, with no stage wherein a thin film under amorphous condition is formed, the organic substance in the thin film is heated up above crystallization temperature at the speed above a specified temperature increase speed for crystallizing the thin film material, while the organic substance removed by thermal decomposition, are included in a thin film manufacturing method. |
