| 摘要 |
<p>PROBLEM TO BE SOLVED: To obtain a resistance film, having excellent temperature characteristics, heat-resisting characteristics and controllability, by a simple method. SOLUTION: First, an insulating base layer 58 is formed of Na-containing SiO2 by spraying primary raw material fog 56. Then, a columnar crystal matrix of conductive film 62 is formed of SnO2 by spraying secondary raw material fog 60. At this time, the Na in the insulating base layer 58 escapes from the surface, and it is deposited on the surface. As a result, a conductive film 62 is not formed on the part where Na is deposited, and void 64 is formed in the crystal matrix of SnO2 . When the void 64 is formed, the number of carriers in the film is decreased, the movement of the carriers in the film is prevented, and a film having a high resistance value can be obtained.</p> |
