SEMICONDUCTOR DEVICE, ITS MANUFACTURE, ITS MANUFACTURING DEVICE, AND LIQUID CRYSTAL DISPLAY

摘要

PROBLEM TO BE SOLVED: To obtain an insulation film with improved interface characteristics and less deterioration by a low-temperature process. SOLUTION: After forming a gate insulation film 103 on a semiconductor layer 102, heat treatment is made under a pressure which is larger than one atmospheric pressure in a gas atmosphere consisting of nitrogen and oxygen such as N2 O and NO. Nitrogen is introduced into Si/SiO2 interface and an unstable connection such as non-connection and non-paired connection decreases, thus forming a stable connection. Since reactivity increases due to a high pressure, reaction is allowed to proceed by a low-temperature process of 700 deg.C or less. By providing a gas cracking means for giving such energy as heat, light, electric field, or magnetic field to the gas introducing pipe made of crystal pipe for mounting a substrate, the reactivity of an introduced gas can be increased and a treatment time can be reduced.