| 摘要 |
A ferroelectric material has hysteresis characteristics in the polarization-electric field relationship thereof, exhibits an antiferroelectric phase at room temperature, and carries out a structural phase transition from the antiferroelectric state to a ferroelectric phase with the application of an electric field thereto, and a phase transition electric field with which the antiferroelectric-to-ferroelectric phase transition is carried out is shifted to a lower electric field with the elevation of the temperature thereof, and a phase transition electric field with which a ferroelectric-to-antiferroelectric phase transition is carried out has a negative value. A semiconductor non-volatile memory, a rewritable optical recording medium, a highly integrated micro-displacement control device, and a shape memory device, each utilizing the above-mentioned ferroelectric material, are provided.
|
