发明名称 Apparatus for microwave processing in a magnetic field
摘要 A microwave-assisted plasma processing apparatus has a reaction chamber in which a substrate holder is provided to support a substrate to be treated. The holder is formed congruent with the inside of reaction chamber and located to substantially separate a reaction space in the reaction chamber save for a narrow clearance therebetween through which exhausted gas passes from said reaction space into said auxiliary space. By this structure, high density plasmas can be formed in the reaction chamber without substantial loss of input microwave energy.
申请公布号 US5609774(A) 申请公布日期 1997.03.11
申请号 US19940194571 申请日期 1994.02.10
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., INC. 发明人 YAMAZAKI, SHUNPEI;KADONO, MASAYA;ITOH, KENJI;TAKAYAMA, TORU;ARAI, YASUYUKI;ISHIDA, NORIYA
分类号 H01J37/32;(IPC1-7):H01L21/302 主分类号 H01J37/32
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