发明名称 |
Method for fabricating narrow base width lateral bipolar junction transistor, on SOI layer |
摘要 |
A process has been developed in which narrow base width, lateral bipolar junction transistors, and short channel length MOSFET devices, can be simultaneously fabricated, in a silicon on insulator layer. The narrow base width is defined by the width of an insulator sidewall spacer, formed on the sides of a polysilicon gate structure. The narrow base width, resulting in increased transistor gain and switching speed, along with reductions in parasitic capacitances, due to placing devices in a silicon on insulator layer, result in enhanced device performance.
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申请公布号 |
US5610087(A) |
申请公布日期 |
1997.03.11 |
申请号 |
US19950565202 |
申请日期 |
1995.11.09 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. |
发明人 |
HSU, CHING-HSIANG;WONG, SHYH-CHYI;LIANG, MONG-SONG;CHUNG, STEVE S. |
分类号 |
H01L21/331;H01L21/84;H01L29/73;(IPC1-7):H01L21/265 |
主分类号 |
H01L21/331 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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