| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a reflection liquid crystal display which is fine and highly reliable and can be manufactured easily, a semiconductor therewith, and its manufacturing method. SOLUTION: At least either one of a source region 11 and a drain region 13 of a MOS transistor formed on a semiconductor substrate 1 includes high- concentration impurity regions 11a and 13a and low-concentration impurity regions 11b and 13b adjacent thereto, and in the regions 11b and 13b, distances 11c and 13c between a gate electrode 12 of the MOS type transistor and high- concentration regions 11a and 13a are respectively specified so that the breakdown strength of the MOS transistor may be adapted to liquid crystal drive voltage, etc.</p> |
