发明名称 |
SINGLE ELECTRON TUNNEL ELEMENT AND ITS MANUFACTURE |
摘要 |
PROBLEM TO BE SOLVED: To provide a single electron tunnel element whose structure and characteristic are controlled and its manufacturing method. SOLUTION: The element has a multiple tunnel joint 6 wherein fine particles 6 made of metal or semiconductor are close to each other at 5nm in distance between particles and are dispersed in an electrical insulating film 4. The joint 6 is produced by accumulating an electrical insulating substance and a metal or semiconductor fine particle alternately or simultaneously through a sputtering method. |
申请公布号 |
JPH0969630(A) |
申请公布日期 |
1997.03.11 |
申请号 |
JP19960158695 |
申请日期 |
1996.06.19 |
申请人 |
MATSUSHITA ELECTRIC IND CO LTD |
发明人 |
KADO HIROYUKI;TODA TAKAO;TANAHASHI ICHIRO;MANABE YOSHIO |
分类号 |
H01L21/8247;H01L29/06;H01L29/66;H01L29/78;H01L29/788;H01L29/792;H01L29/80;(IPC1-7):H01L29/78;H01L21/824 |
主分类号 |
H01L21/8247 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|