发明名称 SINGLE ELECTRON TUNNEL ELEMENT AND ITS MANUFACTURE
摘要 PROBLEM TO BE SOLVED: To provide a single electron tunnel element whose structure and characteristic are controlled and its manufacturing method. SOLUTION: The element has a multiple tunnel joint 6 wherein fine particles 6 made of metal or semiconductor are close to each other at 5nm in distance between particles and are dispersed in an electrical insulating film 4. The joint 6 is produced by accumulating an electrical insulating substance and a metal or semiconductor fine particle alternately or simultaneously through a sputtering method.
申请公布号 JPH0969630(A) 申请公布日期 1997.03.11
申请号 JP19960158695 申请日期 1996.06.19
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 KADO HIROYUKI;TODA TAKAO;TANAHASHI ICHIRO;MANABE YOSHIO
分类号 H01L21/8247;H01L29/06;H01L29/66;H01L29/78;H01L29/788;H01L29/792;H01L29/80;(IPC1-7):H01L29/78;H01L21/824 主分类号 H01L21/8247
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