| 摘要 |
PROBLEM TO BE SOLVED: To enable processes which comprises the removal of an upper film, the post exposure bake of a resist film, and the development of the resist film to be successively carried out in the same developer by a method wherein the post exposure bake of the resist film is carried out with heated release liquid or removing solution. SOLUTION: A wafer 10 is fixed by vacuum-chucking on the rotary specimen pad 31 of a spin developer 3 making its surface where a resist film subjected to pattern-exposure is formed face upwards. Then, heated removing liquid 20 is fed into a cap 32. At this point, as an upper film is soluble in water, pure water is used as the removing liquid 20. The wafer 10 is held in the removing liquid 20, and the removal of the upper film and the post exposure bake of the resist film are carried out in the same process. Thereafter, the removing liquid 20 is discharged from the cap 32, and pure water is fed into the cap 32 to clean and cool the surface of the wafer 10. Then, the rotary specimen pad 31 is rotated to spin-dry the wafer 10. |
