| 摘要 |
A method for fabricating a semiconductor memory device includes the steps of forming, in a semiconductor substrate of a first conductivity type, a well of a second opposite conductivity type by protecting the substrate surface except for a part where the well of the second conductivity type is to be formed, oxidizing the exposed surface of the semiconductor substrate while using the same mask pattern to form a thick oxide film on the surface of the well, and removing the thick oxide film by an etching process to form a recessed surface on the well.
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