CONSTRUCTION AND MANUFACTURING METHOD FOR RESIN ENCAPSULATED SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To reduce the total thickness of a semiconductor device and realize a thin type by connecting an electrode pad to a lead with bonding wire at the offset part formed at the lead. SOLUTION: A semiconductor device 10 has bonding wire 16 for bonding a lead 12 with an electrode pad 13 and the bonding wire bonds the lead 12 at an offset part 12C of the lead 12. The offset part 12C to which the bonding wire 16 is connected is bent correspondingly to the thickness of a insulating tape 15 serving as a bonding means toward insulating a protective film 14 covering the surface of a semiconductor chip 11, and therefore the height of the offset part 12C which is the bonding part to the bonding wire 16 from the insulating protective film 14 is reduced correspondingly. The height H on the surface side of the semiconductor device 11 of a package 18 can accordingly be decreased than conventional without exposing top part of the bonding wire 16 and the semiconductor device can be made thin.