| 摘要 |
PROBLEM TO BE SOLVED: To control the concn. of Te impurities in a thin film with good reproducibility by using a compound of Ga and Te as the Te source in the growth method of a III-V compound semiconductor, which is prepared by laminating the thin film that contains Te as impurities. SOLUTION: In this method, GaTe is used as the compound of Ga and Te, however, any appropriate compound other than Gage or Ga2 Te3 may be used as the Te source. At this time, preferably, this compound is stable at room temp. and has an about <=20mmHg vapor pressure at about 700 to 900 deg.C, that is lower than the vapor pressure of elemental Te. As a compound of the III-V group compound semiconductor, GaAs, Ga1-x Alx As (0<x<1) or GaP is used. In the figure, a GaAs single crystal is placed on a substrate holder 1 and Ga, polycrystalline GaAs, Al and Zn, all of which are dissolved in a solution for growing a p-type epitaxial thin film are placed in a raw material solution reservoir 3, and also, Ga, polycrystalline GaAs, Al and GaTe, all of which are dissolved in a solution for growing an n-type epitaxial thin film are placed in another raw material reservoir 4 to successively grow the p-type and n-type epitaxial thin films. |
