| 摘要 |
PROBLEM TO BE SOLVED: To simplify the structure and production steps of an FIT type CCD solid-state image pickup device having two horizontal charge transfer parts and improve its sensitivity. SOLUTION: Charge transfer electrodes of image sensing part, accumulating part, horizontal charge transfer part, etc., are of a single-layer electrode structure made of opaque conductive film with an electrode space of about 0.2μm, and the opaque conductive film is etched two times by using a photoresist as a mask so as to form a charge transfer area 74 between the horizontal charge transfer parts or transfer electrode, etc. Then a pattern with a space part of about 0.2μm in the photoresist is heated for fusion, and a sensor part is formed through ion implantation by using the photoresist as a mask, further a light shielding film is patterned so as to form a transfer electrode 11 between horizontal charge transfer parts as well as the light shielding film for the image sensing part or accumulating part. Thus, the structure of an FIT type CCD image sensing element can be simplified, and the conventional production steps can be almost halved, furthermore the sensitivity of the device can be greatly improved.
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