| 摘要 |
PROBLEM TO BE SOLVED: To provide an optical semiconductor device such as a semiconductor laser devices having partly introduced strain quantum wells and a manufacturing method thereof. SOLUTION: An optical semiconductor device having a quantum well layer 3 such as semiconductor lasers is produced. This layer 3 has stress strains due to the lattice mismatch between a well layer and a barrier layer. On a substrate 1 semiconductor films 2-5 are laminated, including a quantum well active layer 3. One area of the semiconductor film surface is covered with a dielectric film 6 and the semiconductor films 2-5 partly covered with the film 6 are heat treated to partly relax the stress strain. In this constitution a semiconductor laser suited to the polarized modulation can be made. |
