| 摘要 |
PROBLEM TO BE SOLVED: To enable a CoSi2 film to be selectively formed only on a gate and a diffusion layer by a method wherein cobalt is deposited on a silicon substrate heated at a point lower than a temperature at which the CoSi2 film is formed, and the silicon substrate is vacuum-annealed as kept in a vacuum and then thermally treated. SOLUTION: A Co film 111 is deposited on a substrate heated at a temperature of 450 deg. through a sputtering method. Then, the substrate is heated in a vacuum for five minutes, and a CoSi2 film 114 is formed on a region where the Co film 111 comes into contact with silicon. Then, the substrate is subjected to a rapid thermal treatment(RTA) in a nitrogen atmosphere at a temperature of 500 deg.C for 30 seconds to change the CoSi2 film 114 in phase, whereby a CoSi film 115 20nm in thickness is formed. Then, an unreacted Co film 111 on the insulating film is selectively removed by wet-etching with a mixed solution of sulfuric acid and hydrogen peroxide. Then, the substrate is subjected to a rapid thermal treatment (RTA) in a nitrogen atmosphere at a temperature of 800 deg.C for 10 seconds, whereby the CoSi film 115 is changed in phase into a CoSi2 film 116 of thickness 35nm or so. |
