| 摘要 |
PROBLEM TO BE SOLVED: To provide low-electric-power memory architecture which actualizes a low-threshold-voltage low-source-voltage memory as well as a high-threshold high-source-voltage memory cell. SOLUTION: This system is equipped with a 1st memory area MEM-A106 consisting of memory units having low-threshold-voltage transistors (TR) which are driven by a low-voltage source and a 2nd memory area MEM-B108 consisting of memory units having high-threshold voltage cells which are driven by a high-voltage source. The MEM-A106 stores high-frequency access variables and the MEM-B108 stores low-frequency access variables. The variable which is stored in the MEM-A106 and accessed at the highest frequency enables fast access with low power consumption per accessing operation because of low- threshold voltage designing. For the low-frequency access variables stored in the MEM B108, on the other hand, high electric power is needed for each access operation, but a leak current is too small to ignore in a stationary stable state. |
