| 摘要 |
PROBLEM TO BE SOLVED: To prevent characteristics from deteriorating due to partial short- circuiting by reducing the impurity concentration for determining the conductivity type of a first semiconductor layer at a conductive substrate side as compared with a second semiconductor layer side. SOLUTION: In a photovoltaic element, n-type (or p-type) first semiconductor layer 102, essentially intrinsic (i-type) second semiconductor layer 103, p-type (or n-type) third semiconductor layer 104, and a transparent electrode 105 are formed on a conductive substrate 101 in this order, a pyroelectric electrode 106 is provided on a transparent electrode 105, incidence light 107 is applied from the transparent electrode 105 side. An impurity concentration for determining the conductivity type of the first semiconductor layer 102 is lower than that on a second semiconductor layer 103 side at a region 108 near the interface on the conductive substrate 101 side in the first semiconductor layer 102. Alternatively, the particle diameter of a crystal constituting the first semiconductor layer 102 is smaller than that of the second semiconductor layer 103 side. |
