| 发明名称 |
Voltage boosting circuit of a semiconductor memory circuit |
| 摘要 |
A voltage booting circuit for boosting a supply voltage VCC supplied from a system to a desired boosting voltage VPP level. The voltage boosting circuit includes a transmission transistor formed by a triple-well process. The transmission transistor has bipolar characteristics and operates as a bipolar diode.
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| 申请公布号 |
US5610549(A) |
申请公布日期 |
1997.03.11 |
| 申请号 |
US19950526499 |
申请日期 |
1995.09.15 |
| 申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
CHOI, HOON |
| 分类号 |
G11C11/407;G11C5/14;G11C11/403;H01L21/822;H01L27/04;H01L27/10;H02M3/07;H03K5/02;(IPC1-7):G06F3/02 |
主分类号 |
G11C11/407 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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