发明名称 |
Method of making a vertical FET using epitaxial overgrowth |
摘要 |
A vertical field effect transistor (1700) and fabrication method with buried gates (1704) having spaced apart gate fingers and connecting structure and overgrown with source and channel epilayer followed by a doping connection of the gate fingers and connecting structure is disclosed. The vertical field effect transistor elements (1702, 1704, 1706, 1708, 1720, 1724) are made of III-V semiconductor compound grown on a germanium substrate (1726).
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申请公布号 |
US5610085(A) |
申请公布日期 |
1997.03.11 |
申请号 |
US19950483028 |
申请日期 |
1995.06.07 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
YUAN, HAN-TZONG;KIM, TAE S.;PLUMTON, DONALD L. |
分类号 |
H01L21/335;H01L27/06;H01L29/04;H01L29/10;H01L29/808;(IPC1-7):H01L21/265 |
主分类号 |
H01L21/335 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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