SEMICONDUCTOR LASER DEVICE AND MANUFACTURE THEREOF

摘要

PROBLEM TO BE SOLVED: To produce at a high yield and controllability a semiconductor laser device superior in element life by preventing the deterioration of the element characteristics due to diffusion of Zn in a p-type clad layer. SOLUTION: A C-doped layer 106 is formed between a second p-type AlGaAs clad layer 105 and n-type GaAs current blocking layer 109. The layer 106 suppresses inter-lattice Ga produced by the layer 109 from diffusing whereby Zn in the clad layer 105 can be blocked from abnormally diffusing. Since the clad layer 105 adjacent to the active layer 104 is not doped with C but Zn, the crystal defect is little introduced.