发明名称 SEMICONDUCTOR STORAGE
摘要 PROBLEM TO BE SOLVED: To reduce the number of required set-up of sub-word line drive circuits such as dynamic RAM, etc., taking a hierarchical word line structure and to reduce a cost and power consumption. SOLUTION: This storage is a dynamic RAM, etc., provided with an X address decoder XD taking the hierarchical word line structure and selectively making a main word line a selection level and plural sub-memory arrays SM arranged in the prolonging direction of the main word line. The number of bit lines of the sub-memory arrays SML00-SML17 and SMR00-SMR17 arranged on the X address decoder near end side of the main word line are doubled compared with the sub-memory arrays SML20-SML57 and SMR20-SMR57 arranged on the far end side. Thus, the number of set-up of bit lines are increased matching with sub-word line selection timing margins of respective sub-memory arrays, and the number of required set-up of the sub-memory arrays, that is, sub-word line drive circuits WDR are reduced.
申请公布号 JPH0963265(A) 申请公布日期 1997.03.07
申请号 JP19950242411 申请日期 1995.08.28
申请人 HITACHI LTD;HITACHI VLSI ENG CORP 发明人 KUBOTA NORIAKI;SUZUKI YUKIE
分类号 G11C11/401;G11C11/407;H01L21/8242;H01L27/108 主分类号 G11C11/401
代理机构 代理人
主权项
地址