发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
摘要 PROBLEM TO BE SOLVED: To eliminate insulator capacity formed at a portion exceeding upper and lower ends of each conductor between the conductors and hence reduce capacity between the conductors by providing a cavity exceeding the upper and lower ends of each conductor between the conductors. SOLUTION: A plurality of conductors 12, 13 becoming a second layer are formed on a first interlayer insulating film 11 becoming a first insulating film. A second interlayer insulating film 14 becoming a second insulating film is formed to cover the conductors 12, 13. A cavity 15 having its height exceeding the upper and lower ends of each conductor 12, 13 is provided between the conductors 12, 13. For this, the cavity 15 is formed also on an upper layer part of the first interlayer insulating film 11 and also on a lower layer part of the second interlayer insulating film 14 formed at a location higher than the upper surface of each conductor 12, 13. Thus, a specific inductive capacity between the conductors is reduced and hence capacity between the conductors is reduced.
申请公布号 JPH0964172(A) 申请公布日期 1997.03.07
申请号 JP19950209831 申请日期 1995.08.18
申请人 SONY CORP 发明人 HAYAFUJI TAKANORI;MORIYAMA ICHIRO;HAYASHIDA SEIJI;HASEGAWA TOSHIAKI
分类号 H01L23/522;H01L21/316;H01L21/768 主分类号 H01L23/522
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