| 摘要 |
PROBLEM TO BE SOLVED: To control the waveform of a signal being outputted finally from an IC as desired. SOLUTION: The integrated magnetic sensor comprises an aluminum electrode 2, a spin on glass 3, an insulation layer 4, a thin film reluctance element 5, a conductor layer 6, and a passivation film 7 formed on a diffusion layer 1. When the passivation film 7 is deposited by sputtering and the thin film magnetoresistive element 5 is composed of Ni82Fe12Co6, compressive stress is applied to the thin film magnetoresistive element 5. Consequently, anisotropy is distributed in the direction normal to the surface of element by reverse magnetostrictive effect, and the R-H curve is changed in the direction of high saturation field. When the passivation film 7 is deposited by atmospheric pressure CVD and the thin film magnetoresistive element 5 is composed of Ni82Fe12 Co6, tensile stress is applied to the element 5. Consequently, anisotropy is distributed in the surface of element and the R-H curve is changed in the direction where the variation rateΔR/ΔH between the resistance and field strength is slightly higher.
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