| 摘要 |
PROBLEM TO BE SOLVED: To obtain a surface emitting laser device which can emit uniform polarized light by a method wherein a large strain can be introduced into an active layer. SOLUTION: Carrier electrodes 13 are formed on a subcarrier 12 which comprises protruding parts 12a, and solder bumps 14 are formed on them. An n-type multilayer reflection film 2, an n-type AlGaAs clad layer 3, an InGaAs active layer 4, a p-type AlGaAs clad layer 5 and a p-type multilayer reflection film 6 are grown sequentially on an n-type GaAs substrate 1. An area of 8μm square of the p-type multilayer reflection film is etched, p-side electrodes 7 which cover the multilayered reflection film 6 are formed, and a surface emitting laser substrate 20 which comprises a plurality of surface emitting laser elements 10 is formed. While the p-side electrodes 7 are used as masks, protons are injected, and a high-resistance region 8 for element isolation is formed. Gold bumps 11 are formed on the p-side electrodes 7, the laser substrate 20 is mounted on the subcarrier 12, a reflow soldering operation is performed, and the laser substrate 20 is brought into contact with the protrusion parts 12a.
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